PD ISO/TR 22335:2007
Current
The latest, up-to-date edition.
Surface chemical analysis. Depth profiling. Measurement of sputtering rate. Mesh-replica method using a mechanical stylus profilometer
Hardcopy , PDF
English
31-08-2007
Foreword
Introduction
1 Scope
2 Terms and definitions
3 Symbols and abbreviated terms
4 Principle
5 Procedure
5.1 Generating the replica pattern
5.2 Measurement of sputtered crater depth using a
stylus profilometer
5.3 Estimation of sputtering rate
6 Summary of round-robin results
Annex A (informative) Geometry of specimen surface and
ion gun
Annex B (informative) Dependance of replica patterns on
mesh-opening size
Bibliography
Explains a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm[2] and 3,0 mm[2].
| Committee |
CII/60
|
| DevelopmentNote |
Supersedes 04/30098988 DC. (08/2007)
|
| DocumentType |
Standard
|
| Pages |
28
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This Technical Report describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2. This Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time.
This Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.
| Standards | Relationship |
| ISO/TR 22335:2007 | Identical |
| ISO 12179:2000 | Geometrical Product Specifications (GPS) — Surface texture: Profile method — Calibration of contact (stylus) instruments |
| ISO 13565-3:1998 | Geometrical Product Specifications (GPS) — Surface texture: Profile method; Surfaces having stratified functional properties — Part 3: Height characterization using the material probability curve |
| ASME B46.1 : 2009 | SURFACE TEXTURE (SURFACE ROUGHNESS, WAVINESS, AND LAY) |
| ISO/TR 15969:2001 | Surface chemical analysis — Depth profiling — Measurement of sputtered depth |
| ISO 14606:2015 | Surface chemical analysis — Sputter depth profiling — Optimization using layered systems as reference materials |
| ISO 18115:2001 | Surface chemical analysis — Vocabulary |
| ISO 5436-1:2000 | Geometrical Product Specifications (GPS) — Surface texture: Profile method; Measurement standards — Part 1: Material measures |
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