Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength

Amendment of

EN 60749-19:2003

Published date

09-03-2010

Publisher

European Committee for Standards - Electrical

Foreword
1 Scope
2 Description of the test apparatus
3 Test method
4 Failure criteria
5 Requirements
6 Categories of separation
7 Summary

Describes the integrity of materials and procedures used to attach semiconductor die to package headers or other substrates (for the purpose of this test method, the term "semiconductor die" should be taken to include passive elements).

Committee	SR 47
DocumentType	Test Method
PublisherName	European Committee for Standards - Electrical
Status	Current

Standards	Relationship
NF EN 60749-19 : 2003 AMD 1 2011	Identical
IEC 60749-19:2003+AMD1:2010 CSV	Identical
NBN EN 60749-19 : 2004 AMD 1 2010	Identical
NEN EN IEC 60749-19 : 2003 AMD 1 2010	Identical
I.S. EN 60749-19:2003	Identical
PN EN 60749-19 : 2005 AMD 1 2010	Identical
SN EN 60749-19 : 2003	Identical
CEI EN 60749-19/A1:2011	Identical
UNE-EN 60749-19:2003	Identical
BS EN 60749-19 : 2003	Identical
DIN EN 60749-19:2011-01	Identical
BS EN IEC 60938-2:2021	Identical
BS EN 60749-19:2003+A1:2010	Identical

CEI EN 62047-9 : 2012	SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 9: WAFER TO WAFER BONDING STRENGTH MEASUREMENT FOR MEMS
BS EN 62047-9:2011	Semiconductor devices. Micro-electromechanical devices Wafer to wafer bonding strength measurement for MEMS
I.S. EN 62047-9:2011	SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 9: WAFER TO WAFER BONDING STRENGTH MEASUREMENT FOR MEMS
EN 62047-9:2011	Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS