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EN 62047-9:2011

EN 62047-9:2011

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Published date

08-19-2011

Publisher

European Committee for Standards - Electrical

FOREWORD
1 Scope
2 Normative references
3 Measurement methods
Annex A (informative) - Example of bonding force
Annex B (informative) - An example of the fabrication
        process for three-point bending
        specimens
Bibliography
Annex ZA (normative) - Normative references to international
         publications with their corresponding European
         publications

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

Committee
CLC/SR 47F
DocumentType
Standard
PublisherName
European Committee for Standards - Electrical
Status
Current

BS EN 62047-15:2015 Semiconductor devices. Micro-electromechanical devices Test method of bonding strength between PDMS and glass
I.S. EN 62047-15:2015 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
CEI EN 62047-15 : 2016 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
EN 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass

IEC 62047-4:2008 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
EN ISO 6892-1:2016 Metallic materials - Tensile testing - Part 1: Method of test at room temperature (ISO 6892-1:2016)
ISO 6892-1:2016 Metallic materials Tensile testing Part 1: Method of test at room temperature
IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
EN 60749-19:2003/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
ASTM E 8M : 2004 Standard Test Methods for Tension Testing of Metallic Materials [Metric] (Withdrawn 2008)
IEC 60747-14-1:2010 Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
EN 62047-4:2010 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
IEC 60749-19:2003+AMD1:2010 CSV Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength

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